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| SUM47N10-24L New Product Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) 0.024 @ VGS = 10 V 0.027 @ VGS = 4.5 V ID (A) 47 44 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested APPLICATIONS D Automotive Such As: - HID Lamp - Ignition Systems - Injection Systems D TO-263 G G DS Top View Ordering Information: SUM47N10-24L--E3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Single Pulse Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IS IAs EAs PD TJ, Tstg Limit 100 "20 47 27 70 47 40 80 136b 3.75a -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mount Junction-to-Ambient J ti t A bi t Junction-to-Case Notes a. Surface Mounted on 1" x1" FR4 Board. b. See SOA curve for voltage derating. Document Number: 72827 S-40434--Rev. A, 15-Mar-04 www.vishay.com Free Air RthJA RthJC Symbol Maximum 40 62.5 1.1 Unit _C/W C/W 1 SUM47N10-24L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 100 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currentb IDSS ID(on) VDS = 100 V, VGS = 0 V, TJ = 125_C VDS = 100 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 40 A Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = 10 V, ID = 40 A, TJ = 125_C VGS = 10 V, ID = 40 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductanceb gfs VDS = 15 V, ID = 40 A 0.021 70 70 0.019 0.024 0.048 0.060 0.027 S W 100 1.0 3.0 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 50 V, RL = 1.25 W ID ^ 47 A, VGEN = 10 V, Rg = 2.5 W f = 1 MHz 1 VDS = 50 V, VGS = 10 V, ID = 40 A , , VGS = 0 V, VDS = 25 V, F = 1 MHz 2400 290 120 40 11 9 2.2 8 40 15 80 3.5 13 60 25 120 ns W 60 nC pF Gate-Drain Chargec Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 40 A, VGS = 0 V IF = 47 A, di/dt = 100 A/ms 1.0 75 70 1.5 120 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72827 S-40434--Rev. A, 15-Mar-04 SUM47N10-24L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 160 VGS = 10 thru 6 V 120 I D - Drain Current (A) I D - Drain Current (A) 5V 80 100 Vishay Siliconix Transfer Characteristics 60 80 4V 40 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 40 TC = 125_C 25_C -55_C 20 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Transconductance 100 TC = -55_C r DS(on)- On-Resistance ( W ) 80 g fs - Transconductance (S) 25_C 0.04 0.05 On-Resistance vs. Drain Current 60 125_C 0.03 VGS = 4.5 V 40 0.02 VGS = 10 V 0.01 20 0 0 10 20 30 40 50 60 0.00 0 20 40 60 80 100 ID - Drain Current (A) 4000 ID - Drain Current (A) 20 VDS = 50 V ID = 40 A Capacitance Gate Charge V GS - Gate-to-Source Voltage (V) C - Capacitance (pF) 3000 Ciss 2000 16 12 8 1000 Crss 0 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) Coss 4 0 0 20 40 60 80 Qg - Total Gate Charge (nC) Document Number: 72827 S-40434--Rev. A, 15-Mar-04 www.vishay.com 3 SUM47N10-24L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 3.0 2.5 rDS(on) - On-Resiistance (Normalized) 2.0 1.5 1.0 0.5 0.0 -50 VGS = 10 V ID = 40 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage TJ = 175_C 10 TJ = 25_C -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 50 100 Limited by rDS(on) I D - Drain Current (A) 10 1 ms 10 ms 1 TC = 25_C Single Pulse 100 ms, dc Safe Operating Area 10 ms 40 I D - Drain Current (A) 100 ms 30 20 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 Normalized Thermal Transient Impedance, Junction-to-Case 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 30 www.vishay.com 4 Document Number: 72827 S-40434--Rev. A, 15-Mar-04 |
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